PART |
Description |
Maker |
M312L3223CT0 M312L3223CT0-LB3 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 M312L3223CT0 DDR SDRAM 184pin DIMM Data Sheet
|
Samsung Electronic
|
MT8VDDT3264HDG-265A1 MT8VDDT3264HDG-262XX |
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
|
|
MT8VDDT3264HDY-202XX MT8VDDT6464HDG-202XX |
32M X 64 DDR DRAM MODULE, 0.8 ns, DMA200 64M X 64 DDR DRAM MODULE, 0.8 ns, DMA200
|
|
H5PS5162GFR-S5L H5PS5162GFR-S5I H5PS5162GFR-S5J H5 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84 7.50 X 12.50 MM, ROHS COMPLIANT, FBGA-84 32M X 16 DDR DRAM, 0.45 ns, PBGA84
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
HYMD232726B8J-J HYMD232726B8J-D43 HYMD232726B8JD4 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
IS43R16320D-5TL IS43R32160D-5BL IS46R16320D-6TLA1 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 16M X 32 DDR DRAM, 0.7 ns, PBGA144
|
INTEGRATED SILICON SOLUTION INC
|
HY5DU12822DTP-D43 HY5DU12822DLTP-D43 HY5DU12822DLT |
32M X 16 DDR DRAM, 0.75 ns, PDSO66 64M X 8 DDR DRAM, 0.75 ns, PDSO66 512Mb DDR SDRAM
|
HYNIX SEMICONDUCTOR INC
|
HYMD232726CL8-H HYMD232726CL8-K HYMD232726CL8-L HY |
DDR SDRAM - Unbuffered DIMM 256MB 32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 Unbuffered DDR SDRAM DIMM
|
HYNIX SEMICONDUCTOR INC
|
MT46V32M16P-5BLF MT46V32M16P-5BFTR MT46V32M16P-5BL |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 64M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 512Mb: x4, x8, x16 DDR SDRAM Features 128M X 4 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
IBM11M32735C |
32M x 72 DRAM Module(32M x 72动态RAM模块) 32M × 72配置内存2M × 72配置动态内存模块)
|
International Business Machines, Corp.
|